Method of making buffer layers for III-V devices using solid phase epitaxy
US4952527A · kind A · utility
30Cited by
9References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1988 |
| Grant date | Aug 28, 1990 |
| Priority date | — |
| Expiry date | Feb 19, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/971
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new III-IV buffer material is described which is produced by low temperature growth of III-V compounds by MBE that has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor devices, such as HEMT's, MESFET's and MISFET's. In the case of the III-V material, GaAs, the buffer is grown under arsenic stable growth conditions, at a growth rate of 1 micron/hour, and at a substrate temperature preferably in the range of 150 to about 300.degree. C. The new material is crystalline, highly resistive, optically inactive, and can be overgrown with high quality III-V active layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.