Gate turn-off power semiconductor component
US4952990A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 6, 1989 |
| Grant date | Aug 28, 1990 |
| Priority date | — |
| Expiry date | Mar 6, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/311
Abstract
In a gate turn-off power semiconductor component in the form of a field-controlled thyristor (FCTh) with (14) separated from each other by trenches (10), means of control which make possible a constricton of the current-carrying channel over the entire depth of the cathode finger (14) and at the same time do not increase or do not substantially increase the ON resistance of the component are additionally provided in the region of the trench walls (9). In an exemplary embodiment, a p-doped wall layers (4), which have a reduced doping concentration compared with the gate regions (8) on the trench floors are introduced into the trench walls (9) as means.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.