Method for forming a heteroepitaxial structure, and a device manufactured thereby
US4953170A · kind A · utility
8Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1989 |
| Grant date | Aug 28, 1990 |
| Priority date | — |
| Expiry date | Jun 15, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Described is a method for forming epitaxial films comprising successive layers of at least ternary and at least quaternary III-V material grown by metalorganic vapor-phase epitaxy. Between the steps of growing successive layers, the growth chamber is first flushed, advantageously in successive steps using a pair of gaseous Group V hybrides, a few monolayers of binary III-V material are then deposited, and then the growth chamber is again flushed. As a result, interfaces are sharper and interfacial defects are reduced. Also described are quantum well lasers made according to the inventive method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.