Microwave plasma CVD apparatus having substrate shielding member
US4953498A · kind A · utility
10Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 1990 |
| Grant date | Sep 4, 1990 |
| Priority date | — |
| Expiry date | Feb 7, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32633
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved MW-PCVD apparatus, characterized in that in the MW-CVD apparatus having a substrate onto which a deposited film to be formed and a space near the substrate for the decomposition of a raw material gas with the action of microwave energy, a shielding member is provided between said substrate and said space, which has an opening to allow part of the decomposed raw material gas species to be passed toward the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.