Silicon wafers for producing oxide layers of high breakdown strength and process for the production thereof

US4954189A · kind A · utility

Assignee

• Wacker-Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH · DE

Inventors

• Peter Hahn · Bensberg, DE
• Hubert Piontek · Altötting, DE
• Anton Schnegg · Burghausen, DE
• Werner Zulehner · Burghausen, DE

Key dates

• Filing date: Sep 28, 1988
• Grant date: Sep 4, 1990
• Expiry date: Sep 28, 2008

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/974
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Silicon wafers and a process for the production thereof which produces was having intrinsic gettering action and on which thin oxide layers with high breakdown strength can be produced. During the production, the wafers are subjected to a treatment which smooths the wafer surface, for example, by repolishing, after the intrinsic getters have been produced in the interior of the wafer. Oxide layers subsequently deposited are outstanding for an increased breakdown strength compared with untreated wafers.