Semiconductor device with composite electrode
US4954871A · kind A · utility
2Cited by
10References
7Claims
0Family size
Inventors
Key dates
| Filing date | Jan 21, 1988 |
| Grant date | Sep 4, 1990 |
| Priority date | — |
| Expiry date | Jan 21, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device having a single continuous wiring layer in which a predetermined portion thereof is made of a semiconductor material, and the remaining portion thereof is made of a metal compound of the semiconductor material. The predetermined portion of the wiring layer preferably constitutes the gate electrode of a field effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.