Solid-state imaging device including photoelectric conversion elements integrated at a surface of a semiconductor substrate
US4954895A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1988 |
| Grant date | Sep 4, 1990 |
| Priority date | — |
| Expiry date | Dec 2, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
A solid-state imaging device has a plurality of photodiodes (photoelectric conversion elements) formed in a surface of a semiconductor substrate in a matrix configuration and reading means for reading out signal charges stored in the photodiodes in accordance with the incident lights in a predetermined order. This reading means includes active elements, such as MOS type transistors, connected to each of the photodiodes. A MOS type transistor constituting part of theses active elements is provided in the path of the transmitting incident light for the associated photodiode. By this configuration, the area occupied by one picture element is reduced as far as the processing steps allow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.