Semiconductor arrangement for producing a periodic refractive index distribution and/or a periodic gain distribution
US4955036A · kind A · utility
3Cited by
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14Claims
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Assignee
Inventor
Key dates
| Filing date | Mar 17, 1989 |
| Grant date | Sep 4, 1990 |
| Priority date | — |
| Expiry date | Mar 17, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1057
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A device for the amplification of light including a periodic semiconductor structure composed of different layers extending in the propagation direction of the optical wave. The periodic structure is constructed of a series connection of at least two semiconductor materials having the band gaps E1 and E2 and the refractive indices n1 and n2 (e.g., E1<E2, n1>n2), can be operated as follows: PA0 as a passive interference filter; PA0 as an active, partially amplifying interference filter; PA0 as a narrow band optical amplifier; PA0 as a single-mode laser which emits only a single mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.