Process of making high quality single quartz crystal using silica glass nutrient
US4956047A · kind A · utility
4Cited by
11References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 1988 |
| Grant date | Sep 11, 1990 |
| Priority date | — |
| Expiry date | Aug 8, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1096
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Ultra high pure quartz is grown by a one step in-situ growth process where the nutrient is high purity silica. A negative temperature gradient is maintained between the nutrient zone and the seed zone until about the start of crystal growth. A sealable container made of silver contains the nutrient and the seed within the autoclave chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.