Sputtering apparatus
US4956070A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1989 |
| Grant date | Sep 11, 1990 |
| Priority date | — |
| Expiry date | Apr 14, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plural-cathode sputtering apparatus capable of producing mixed thin films having a period of stratification as small as 10 .ANG. without putting an undue load on the power supplies. Two different types of targets are provided on a cathode side, and a substrate onto which sputtering is performed is provided on the anode side. Magnetic field generators produce magnetic fields substantially perpendicularly intersecting the electric fields generated between the plate and the targets near and front sides of the targets. The magnetic field generators are each composed of main magnets and electromagnets, which may be combined with the main magnets. Electrical currents are produced for exciting the electromagnets which are controlled in such a manner as to change the magnetic intensity of the magnetic fields and to thereby regulate the sputtering discharge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.