Production of a thin x-ray amorphous aluminum nitride or aluminum silicon nitride film on a surface
US4957604A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 24, 1989 |
| Grant date | Sep 18, 1990 |
| Priority date | — |
| Expiry date | Jan 24, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2007/25713
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A thin X-ray amorphous aluminum nitride or aluminum silicon nitride film is produced on a surface by vaporization of aluminum or of aluminum and silicon by reactive sputtering or reactive magnetron sputtering under reduced pressure in a process gas atmosphere, so that a sputter gas results, and deposition of the aluminum nitride or of the aluminum silicon nitride from the sputter gas onto the said surface, resulting in the said thin X-ray amorphous aluminum nitride or aluminum silicon nitride film, by a process in which the said process gas atmosphere consists essentially of nitrogen and argon and one or more further noble gases selected from the group consisting of neon, krypton and xenon, the volume ratio of argon to the further noble gases being from 2:1 to 100:1 and the volume ratio of the further noble gases to nitrogen being from 2:1 to 10:1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.