Method for forming functional deposited films by means of microwave plasma chemical vapor deposition method
US4957772A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1988 |
| Grant date | Sep 18, 1990 |
| Priority date | — |
| Expiry date | Dec 21, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/065
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An improved method for forming a functional deposited film by introducing a raw material gas into a substantially enclosed reaction chamber containing a substrate onto which the functional deposited film is to be deposited and coupling microwave energy from a source of microwave energy thereinto to thereby form a glow discharge plasma causing decomposition of the raw material gas whereby forming the functional deposited film on the substrate, the improvement comprising supplying microwave of a power equivalent to 1.1 times or more over that of microwave with which the deposition rate for the decomposed products from the raw material gas being deposited onto the substrate to be saturated to the raw material gas in the reaction chamber and regulating the inner pressure of the reaction chamber to a vacuum of 10 m Torr or less. According to the method of this invention, there can be formed a desired functional deposited film having a wealth of many practically applicable characteristics and having an improved response speed against photocurrent at an improved deposition rate with a raw material gas utilization efficiency of hundred percent or nearly hundred percent. And the method of t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.