Deposition of boron-containing films from decaborane
US4957773A · kind A · utility
153Cited by
16References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1989 |
| Grant date | Sep 18, 1990 |
| Priority date | — |
| Expiry date | Feb 13, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Depopsition of a boron nitride film is carried out by introducing decaborane and dry nitrogen or ammonia into a plasma-assisted chemical vapor deposition chamber. The nitrogen or ammonia partial pressure should provide an excess over the decarborane pressures for example 200 milliTorr of N.sub.2 or NH.sub.3 and 50 MilliTorr of B.sub.10 H.sub.14. Other film layers can also be produced starting from decaborane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.