Floating diode gain compression
US4958207A · kind A · utility
4Cited by
25References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1989 |
| Grant date | Sep 18, 1990 |
| Priority date | — |
| Expiry date | Mar 17, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/158
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A gain compression method and apparatus which is especially suitable for charge coupled devices is disclosed. A mobile charge packet generation area is provided with an adjacent overflow barrier. The overflow barrier is adjacent an N+ diffusion region which provides parasitic capacitance to the overflow barrier. The diffusion region adjusts the potential of the overflow barrier as greater amounts of charge overflow the barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.