Method for making an amorphous aluminum-nitrogen alloy layer
US4959136A · kind A · utility
16Cited by
4References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 29, 1987 |
| Grant date | Sep 25, 1990 |
| Priority date | — |
| Expiry date | Jun 29, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B11/10589
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a method for producing an amorphous aluminum nitride layer having a desired stoichiometry. Such method involves the steps of disposing a substrate in close proximity to an aluminum target in a low pressure atmosphere of nitrogen and an inert gas, and reactive sputtering an aluminum nitride layer onto the substrate at a certain minimum deposition rate while maintaining certain parameters (i.e. nitrogen-to-inert gas ratio, substrate temperature, sputtering power, nitrogen flow rate and sputtering pressure) within certain limits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.