Patent · US Expired

Method for manufacturing a semiconductor component contactable on both sides

US4959328A · kind A · utility

2Cited by

0References

7Claims

0Family size

Assignee

Licentia Patent-Verwaltungs-GmbH · DE

Inventors

Wolfgang Behr · Thalfingen, DE
Johann-Friedrich Luy · Ulm, DE
Karl Strohm · Ulm, DE

Key dates

Filing date	May 27, 1988
Grant date	Sep 25, 1990
Priority date	—
Expiry date	May 27, 2008

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/977
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for manufacturing semiconductor components contactable on both sides, in particular IMPATT diodes. The active silicon layers of the IMPATT diode are grown onto a silicon substrate. The first silicon layer grown onto the silicon substrate has a high boron/germanium doping level and acts as an etch atop layer when the substrate is removed. The boron/germanium doping of the first silicon layer compensates for the mechanical stress in the silicon layer generated by the boron doping.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.