Semiconductor device having polycrystalline silicon resistor
US4961103A · kind A · utility
31Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 23, 1988 |
| Grant date | Oct 2, 1990 |
| Priority date | — |
| Expiry date | Nov 23, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/905
Abstract
A semiconductor device having a silicon resistor element is disclosed. The silicon resistor element includes a first polycrystalline silicon film containing oxygen atoms with a low density, and a second polycrystalline silicon film disposed on the first polycrystalline silicon film and containing oxygen atoms with a high density. A silicon oxide film converted from polycrystalline silicon is attached to the top surface of the second polycrystalline silicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.