Patent · US Expired

Method and components for bonding a silicon carbide molded part to another such part or to a metallic part

US4961529A · kind A · utility

28Cited by
4References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 20, 1988
Grant dateOct 9, 1990
Priority date
Expiry dateDec 20, 2008

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/266
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

A layer of titanium carbosilicide Ti.sub.3 SiC.sub.2 on a silicon carbide surface polished for making a joint makes it possible to join silicon carbide bodies together in a hot pressing procedure and obtaining a joint strength comparable to the strength of the silicon carbide material. Such a layer on silicon carbide also makes possible brazed juoints with steel alloy or nickel based alloy parts. The layer may be applied directly by a powder dispersion in a volatile but viscous glycol or by sputtering or else the layer can be made in place from a powder mixture of components, especially TiC.sub.0,8 and Tisi.sub.2 (5:1) or a titanium layer of a thickness in the range of 1 to 3 .mu.m that reacts with the silicon carbide surface. When silicon carbide parts are joined together, the heating up to make the joint also serves to convert a titanium layer into titanium carbosilicide. When silicon carbide is to be joined with metal, a preliminary heating step is necessary to at first convert a powder mixture or a titanium layer on the silicon carbide surface to Ti.sub.3 SiC.sub.2. Alternatively a Ti.sub.3 SiC.sub. 2 surface layer can be formed by a sputtering process. The Ti.sub.3 SiC.sub.2 l…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.