Process for producing single crystals
US4961818A · kind A · utility
11Cited by
3References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 21, 1985 |
| Grant date | Oct 9, 1990 |
| Priority date | — |
| Expiry date | Jun 21, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for producing a single crystal object made of a nickel-base, O.D.S., gamma prime strengthened alloy which involves diffusion bonding a seed crystal to a mass of such alloy in recrystallizable state and thereafter zone annealing to grow a single crystal through the mass of alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.