Conductive metal-filled substrates via developing agents
US4961879A · kind A · utility
3Cited by
0References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1988 |
| Grant date | Oct 9, 1990 |
| Priority date | — |
| Expiry date | Jun 8, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01B1/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A conductive metal-filled substrate is formed by intermingling copper or nickel particles into the substrate, contacting the metal particles with a specified developing agent, and heating the metal particles and the developing agent. The filled substrates are electrically conductive and are useful for a variety of uses such as EMI shielding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.