Sputtering process and an apparatus for carrying out the same
US4963239A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1989 |
| Grant date | Oct 16, 1990 |
| Priority date | — |
| Expiry date | Jan 26, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sputtering process of a substrate biasing system and an apparatus for carrying out the same, capable of forming a film in satisfactory surface coverage over stepped underlying layer. The present invention solves problems in the quality of films formed by the conventional sputtering process of a substrate biasing system by regulating the bias potential of a substrate on which a film is to be formed so that the kinetic energy of ions of a sputtering gas falling on the substrate is varied periodically. The bias potential is regulated by periodically varying the amplitude of the output of a radio frequency (or dc) bias power supply or by changing the duty factor of a voltage pulse stream of the output of the radio frequency (or dc) bias power supply.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.