Electrophotographic photoreceptor having surface layers
US4965154A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 1989 |
| Grant date | Oct 23, 1990 |
| Priority date | — |
| Expiry date | Jun 19, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08235
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrophotographic photoreceptor comprising a photoconductive layer, a first surface layer and a second surface layer formed in sequence on a support, said photoconductive layer being substantially composed of amorphous silicon, and each of said first and second surface layers being substantially composed of nitrogen-doped amorphous silicon, the concentration of nitrogen atoms in the second surface layer being higher than that in the first surface layer. The photoconductive layer is doped with atoms of an element of group III, or in at least a part of the photoconductive layer doped with germanium atoms in place of the element of group III.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.