Solid state pressure sensors
US4965697A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1989 |
| Grant date | Oct 23, 1990 |
| Priority date | — |
| Expiry date | Mar 29, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Solid state pressure sensors based upon aluminum gallium arsenide devices are disclosed. One embodiment uses a TEGFET as a hydrostatic pressure sensor. By adjustment of the gate voltage, it is possible to vary the operating conditions of the sensor, so as to adapt it dynamically to particular measurement conditions. Another hydrostatic pressure transducer, essentially made from aluminum gallium arsenide on a gallium arsenide substrate, comprises a layer sensitive to pressure and a layer sensitive to temperature: due to its homogeneous structure and its rigorous temperature compensation, this transducer offers both high accuracy and high sensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.