Method for removing photoresist

US4966664A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Hermann Buerk · Maisach, DE
• Thomas Wagner · Kerpen, DE
• Michael Steinhauser · Eichenau, DE

Key dates

• Filing date: Apr 10, 1989
• Grant date: Oct 30, 1990
• Expiry date: Apr 10, 2009

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C25F1/00
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for removing photoresists, particularly those stressed during etching is provided. Pursuant to the method, an electrolysis is performed in order to promote basic decoating bath, wherein the substrate carrying the stressed photoresist structure is wired as a cathode. Gases arising directly at the substrate surface or, respectively, at the exposed metallic surfaces, effect a complete decoating the photoresist structure that at the same time is dissolving in the basic bath.