Method for the production of oxide superconducting films by laser assisted molecular beam epitaxy
US4966887A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 24, 1988 |
| Grant date | Oct 30, 1990 |
| Priority date | — |
| Expiry date | Jun 24, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/73
Abstract
The present invention relates to a method of directly forming a thin, oriented layer, or film, of superconducting materials, or compositions suitably mixtures of Perovskite-type superconducting oxides, on a support base, or substrate, by the use of a laser assisted molecular beam epitaxy. The method steps generally comprise forming at least one target comprised of metallic precursors of a superconducting oxide composition and vaporizing at least a portion of the target using a vaporization laser beam to produce a vaporized precursor of an appropriate or desired entrained in a pulsed, rapidly flowing, gaseous atmosphere containing at least one gas reactive with said vaporized precursor composition to form a reacted precursor of a superconducting composition. The reacted precursor composition is then formed into a substantially singular, uniform molecular beam, and deposited on a substrate in the form of a thin layer. The apparatus comprises a vaporization laser capable of producing a pulsed laser beam, a pulsed supersonic nozzle having a target chamber, a pressure chamber and a reaction tube, the reaction tube having an entry end and an exit end, the exit end having a microscopic-si…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.