Electronic devices
US4968382A · kind A · utility
37Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 1990 |
| Grant date | Nov 6, 1990 |
| Priority date | — |
| Expiry date | Jan 12, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/3042
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In the production of micron-size pyramid emitters for field emission devices, very sharp emitter points are achieved by providing a layer of suitable metal, metal compound or semiconductor, forming masking pads over the required emitter positions, etching the layer so that column-like structures are formed beneath the pads, removing the pads, and then subjecting the columns to dry etching, such as plasma etching, reactive ion etching, ion beam milling or reactive ion beam milling. The dry etching process shapes the columns into pyramids with a tip size of the order of 0.03 microns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.