Semiconductor devices
US4968638A · kind A · utility
14Cited by
0References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 2, 1988 |
| Grant date | Nov 6, 1990 |
| Priority date | — |
| Expiry date | Sep 2, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/106
Abstract
A method of manufacture of thin film, field-effect transistors formed on a transparent substrate and with transparent, conductive source and drain electrodes, uses initially deposited gate electrodes as a mask in association with photolithographic processing using radiation transmitted through the substrate and electrodes to minimize parasitic capacitance between the gate and source and drain electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.