Method for fabricating devices and devices formed thereby
US4968644A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 1988 |
| Grant date | Nov 6, 1990 |
| Priority date | — |
| Expiry date | May 5, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a device, e.g., a semiconductor device, is disclosed which includes the step of reacting at least two reactive entities to form a metal-containing material on a region or regions of a processed or unprocessed substrate. Inherent in the method is the recognition that one of the reactive entities will often react with substrate material to produce previously unrecognized, and highly undesirable, results, e.g., the almost complete erosion of previously fabricated device components. Thus, and in accordance with the inventive method, any one of a variety of techniques is employed to reduce the reaction rate between the substrate material and the entity reacting with this material, while avoiding a substantial reduction in the reaction rate between the two entities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.