SOS transistor structure
US4969023A · kind A · utility
26Cited by
1References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 23, 1988 |
| Grant date | Nov 6, 1990 |
| Priority date | — |
| Expiry date | Aug 23, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
Abstract
A MOS transistor is formed in a silicon layer applied on an insulating base. The channel region of the transistor has a weakly doped region located nearest the surface of the layer and a more heavily doped region nearest the base. The latter region extends in under the source region of the transistor and is connected to the source contact of the transistor via a highly doped region of the same conduction type. The more heavily doped region is doped with a doping dose of at least 2.10.sup.12 cm.sup.-2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.