Amorphous silicon photosensor with oxygen doped layer
US4969025A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 25, 1989 |
| Grant date | Nov 6, 1990 |
| Priority date | — |
| Expiry date | Sep 25, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A sandwich type amorphous silicon photosensor suitable for use as an image sensor of a facsimile machine or the like is provided. The photosensor includes a pair of first and second electrodes and an amorphous silicon multi-layer structure sandwiched between the first and second electrodes. The first electrode includes an oxide and has a transparency of 80% or more in a visible light region. The multi-layer structure includes a first amorphous silicon layer which is in contact with the first electrode. The first amorphous silicon layer contains at least oxygen and has an optical bandgap in a region of 2.0 eV or more, a resistivity in a range of 10.sup.12 -10.sup.14 ohms-cm, a photoconductive characteristic and a refractive index in a range of 1.8-3.4
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.