Semiconductor laser devices
US4969151A · kind A · utility
0Cited by
0References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 1989 |
| Grant date | Nov 6, 1990 |
| Priority date | — |
| Expiry date | May 10, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Carrier injection layers are formed on an Al.sub.x Ga.sub.1-x As clad layer of high resistance by embedding and re-growth with the use of crystal growth processes such as MO-VPE or MO-MBE where material supply sources are all provided by gas sources, whereby it is not required to mesa-etch embedding regions to a depth reaching a substrate. The formation of any separate blocking layer is dispensed with, any possible influence of the substrate is eliminated; and the time constant is decreased by decreasing the inter-electrode capacity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.