Plasma processing apparatus
US4970435A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1988 |
| Grant date | Nov 13, 1990 |
| Priority date | — |
| Expiry date | Dec 8, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32357
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a plasma processing apparatus of this invention, a reaction chamber opposed to a plasma generating chmaber is entirely opened at its one side surface opposing the obect to be processed, and an interval between the one side surface and the other side surface is set to be an integer multiple of a 1/2 wavelength of the microwave. A microwave oscillated by a microwave oscillator and supplied to a vacuum vessel can be converted into a plasma energy with high conversion efficiency, thereby minimizing a reflected wave.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.