Plasma processing method and apparatus
US4971667A · kind A · utility
36Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1989 |
| Grant date | Nov 20, 1990 |
| Priority date | — |
| Expiry date | Feb 3, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electromagnetic power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are additionally applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.