Method of making a light emitting semiconductor having a rear reflecting surface
US4971928A · kind A · utility
58Cited by
10References
5Claims
0Family size
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Inventor
Key dates
| Filing date | Jan 16, 1990 |
| Grant date | Nov 20, 1990 |
| Priority date | — |
| Expiry date | Jan 16, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/106
Abstract
A light emitting semiconducting structure is formed over a light reflecting surface using epitaxial growth techniques. The light reflecting surface is provided by an appropriate metal layer intermediately disposed between two dielectric layers, this multi-layer structure is disposed intermediate between an underlying substrate and the overlaying light emitting semiconducting components. The light reflecting surface provides enhanced photon reflectance for the light emitting device. The active region of the light emitting device is formed using epitaxial growth techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.