Multi-layer circuit structure with thin semiconductor channels
US4972248A · kind A · utility
11Cited by
14References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 1989 |
| Grant date | Nov 20, 1990 |
| Priority date | — |
| Expiry date | May 11, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/05
Abstract
A three-dimensional multiple-circuit layer semiconductor device has multiple circuit layers vertically stacked on a single crystal wafer. Thick single-crystal InSb film serves as conductors and contacts, thin single-crystal InSb film serves as semiconductor channels, and CdTe serves as insulator layers. The good lattice match between the two materials permits epitaxial growth of fifty or more layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.