Protective coating useful as passivation layer for semiconductor devices
US4972250A · kind A · utility
54Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 1987 |
| Grant date | Nov 20, 1990 |
| Priority date | — |
| Expiry date | Mar 2, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A protective coating useful as a passivation layer for semiconductor devices incorporates a thin film of an amorphous diamond-like carbon. In one implementation, a thin film of amorphous silicon is deposited over the carbon material. The semiconductive passivation coating eliminates electrical shorts, dissipates charge build-up and protects against chemical contamination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.