Field effect transistor having an integrated capacitor

US4974039A · kind A · utility

Assignee

• Raytheon Company · US

Inventors

• Manfred Schindler · Borgo San Lazzaro, DE
• Shiou L. L. Chu · Bedford, US

Key dates

• Filing date: Aug 14, 1989
• Grant date: Nov 27, 1990
• Expiry date: Aug 14, 2009

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

An integrated field effect transistor capacitor structure having a capacitor connected between source and drain electrodes is described. In one embodiment, the capacitor is formed over a drain contact by providing a dielectric over said contact and an airbridge upper plate between said dielectric to the adjacent source contact. Preferably, the capacitor dielectric is the same dielectric as the FET passivation.