Method of transferring Bloch lines in the domain wall of a magnetic domain, and a magnetic memory using the method
US4974200A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1987 |
| Grant date | Nov 27, 1990 |
| Priority date | — |
| Expiry date | Jul 28, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/0825
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of transferring Bloch lines present in a domain wall of a magnetic domain formed in a thin magnetic firm, includes cyclically forming asymmetrical potential wells along the domain wall in order to locate the Bloch lines at predetermined positions of the domain wall, and applying a pulsed magnetic film to shift the Bloch lines from a predetermined potential well to another potential well. In a magnetic memory for recording information using Bloch lines as an information carrier, a memory substrate has a stripe magnetic domain defined by a domain wall along which asymmetrical potential wells are cyclically formed to stabilize the Bloch lines along the domain wall. The Bloch lines are written in the domain wall in accordance with input information, the Bloch lines so formed are read out, and the read-out Bloch lines are converted into an electrical signal. A pulsed magnetic field is applied in a direction perpendicular to a surface of the memory substrate for shifting the Bloch lines between potential wells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.