Visible light semiconductor laser
US4974231A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 23, 1989 |
| Grant date | Nov 27, 1990 |
| Priority date | — |
| Expiry date | Jan 23, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3202
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a visible light semiconductor laser with (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P (0.ltoreq.x .ltoreq.1) crystal layers and a process for growing an(Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P (0.ltoreq.x.ltoreq.1) crystal, a GaAs substrate on which (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P is grown in an epitaxial method selected from MOVPE and MBE provides one selected from a (110) plane, a plane equivalent to the (110) plane, a (111) plane, and a plane equivalent to the (111) plane as a main plane for a crystal growth of (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P. As a result, a bandgap energy Eg of the (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P crystal can be the maximum value inherent to the mixed crystal independent on a growth temperature and a V/III ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.