Method of plasma etching amorphous carbon films
US4975144A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1989 |
| Grant date | Dec 4, 1990 |
| Priority date | — |
| Expiry date | Mar 17, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method for selectively eliminating carbon material deposited on a substrate is described. A layer of masking material may be applied over areas of the carbon coating whose removal is not desired. After disposing the substrate coated with the carbon material in a CVD reaction chamber, NF.sub.3 is admitted to the chamber and converted into a plasma etchant comprising fluorine ions or radicals by inputting high frequency energy. The fluorine ions or radicals remove all unmasked carbon, leaving a carbon film pattern on the substrate which may be used in the manufacture of an IC. The carbon material elimination method can also be used for chamber cleaning to removing carbon deposited debris from the inside of the CVD reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.