Thin film electroluminescence device
US4975338A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 1989 |
| Grant date | Dec 4, 1990 |
| Priority date | — |
| Expiry date | Apr 12, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B33/28
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film EL device is disclosed which comprises (a) a substrate, (b) a transparent electrode layer formed on the substrate, (c) one or more insulating layers formed on the transparent electrode layer, with at least one of the insulating layers comprising a crystalline nitride, (d) an electroluminescent emitting layer comprising a luminescent host material consisting of an alkali earth calcogen compound formed on the insulating layers, and (e) a back electrode layer. In the above thin film EL device, it is preferable that the insulating layer in contact with the electroluminescent layer comprise a crystalline aluminum nitride or boron nitride, and that the transparent electrode layer comprise a host material consisting of a C-axis oriented zinc oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.