Sintered high density silicon oxnitride and method for making the same
US4975394A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Apr 28, 1988 |
| Grant date | Dec 4, 1990 |
| Priority date | — |
| Expiry date | Apr 28, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B35/597
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A sintered silicon oxynitride composition comprises as an amount of starting material the combination of (a) a silicon component comprising silicon nitride(Si.sub.3 N.sub.4) and silicon oxide(SiO.sub.2) in a mol ratio of SiO.sub.2 /Si.sub.3 N.sub.4 being 0.7 to 1.2, and (b) at least one second component selected from an aluminum oxide, an aluminum nitride, a rare earth oxide, and a rare earth nitride, said second component being in an amount of from about 0.1 to 10 mol per 100 mol of said silicon component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.