Patent · US Expired

Sintered high density silicon oxnitride and method for making the same

US4975394A · kind A · utility

4Cited by
3References
4Claims
0Family size

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Key dates

Filing dateApr 28, 1988
Grant dateDec 4, 1990
Priority date
Expiry dateApr 28, 2008

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC04B35/597
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

A sintered silicon oxynitride composition comprises as an amount of starting material the combination of (a) a silicon component comprising silicon nitride(Si.sub.3 N.sub.4) and silicon oxide(SiO.sub.2) in a mol ratio of SiO.sub.2 /Si.sub.3 N.sub.4 being 0.7 to 1.2, and (b) at least one second component selected from an aluminum oxide, an aluminum nitride, a rare earth oxide, and a rare earth nitride, said second component being in an amount of from about 0.1 to 10 mol per 100 mol of said silicon component.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.