Semiconductor diode laser array
US4975923A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1990 |
| Grant date | Dec 4, 1990 |
| Priority date | — |
| Expiry date | Mar 5, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4068
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor diode laser array device 1 capable of emitting a high optical power in a narrow beam, the device 1 comprising a surface emission multiridge waveguide structure in which emission can take place from a surface 4 occupying both a longitudinal and a lateral dimension of the device, the dimension in each case being much greater than the emitted light wavelength. Stability in one of said dimensions may be maintained by an array design having a spaced arrangement of laser elements positioned such that the optical field in one element partly overlaps that of a neighboring element. Preferably, the sum of the propagation constant and the coupling parameters to the neighboring elements equals the same value for all the elements in the array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.