Diode laser array
US4976539A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 1989 |
| Grant date | Dec 11, 1990 |
| Priority date | — |
| Expiry date | Aug 29, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/06213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A diode laser array comprises a substrate of a semiconductor material having first and second opposed surfaces. On the first surface is a plurality of spaced gain sections and a separate distributed Bragg reflector passive waveguide at each end of each gain section and optically connecting the gain sections. Each gain section includes a cavity therein wherein charge carriers are generated and recombine to generate light which is confined in the cavity. Also, the cavity, which is preferably a quantum well cavity, provides both a high differential gain and potentially large depth of loss modulation. Each waveguide has a wavelength which is preferably formed by an extension of the cavity of the gain sections and a grating. The grating has a period which provides a selective feedback of light into the gain sections to supporting lasing, which allows some of the light to be emitted from the waveguide normal to the surface of the substrate and which allows optical coupling of the gain sections. Also, the grating period provides an operating wavelength which is on the short wavelength side of the gain period of the gain sections required for laser oscillation. An RF pulse is applied so as…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.