Process for forming one or more substantially pure layers in substrate material using ion implantation
US4976987A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 1989 |
| Grant date | Dec 11, 1990 |
| Priority date | — |
| Expiry date | Aug 10, 2009 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/5873
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.