Method of making heterojunction P-I-N photovoltaic cell
US4977097A · kind A · utility
8Cited by
6References
25Claims
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Key dates
| Filing date | Aug 1, 1989 |
| Grant date | Dec 11, 1990 |
| Priority date | — |
| Expiry date | Aug 1, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A heterojunction p-i-n photovoltaic cell having at least three different semiconductor layers formed of at least four different elements comprises a p-type relatively wide band gap semiconductor layer, a high resistivity intrinsic semiconductor layer, used as an absorber of light radiation, and an n-type relatively wide band gap semiconductor layer. The intrinsic layer is in electrically conductive contact on one side with the p-type layer and on an opposite side with the n-type layer. First and second ohmic contacts are in electrically conductive contact with the p-type layer and the n-type layer, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.