Method for producing a semiconductor device by filling hollows with thermally decomposed doped and undoped polysilicon
US4977104A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1989 |
| Grant date | Dec 11, 1990 |
| Priority date | — |
| Expiry date | Mar 23, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/047
Abstract
A method is provided for producing a semiconductor device characterized by filling hollows having a high aspect ratio with a semiconductor film doped with impurities as dopants and an undoped semiconductor film, given that the doped polycrystalline Si film produced by thermal decomposition of reactive gases mixed with impurity gases and the undoped polycrystalline Si film produced by thermal decomposition of reactive gases containing no impurity gas have different step coverage characteristics from each other. The method allows uniform distribution of dopants as well as improvement of processing throughput by forming sequentially the two types of semiconductor films in one reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.