Apparatus for forming film with surface reaction
US4977855A · kind A · utility
13Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1988 |
| Grant date | Dec 18, 1990 |
| Priority date | — |
| Expiry date | Sep 28, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/483
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for forming a high quality film at high speed includes a wafer susceptor provided wiht a vacuum exhaust system, a stock gas supply system, and a heating mechanism for directly heating the susceptor. A ceramic filter means is disposed in opposite juxtaposed face to face position relative to the wafer susceptor for blowing stock gas in a uniform manner against a wafer. Means for activating the stock gas is provided to thereby increase the probability of adsorption of the stock gas on the wafer surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.