Method of joining semiconductor substrates
US4978379A · kind A · utility
5Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 1988 |
| Grant date | Dec 18, 1990 |
| Priority date | — |
| Expiry date | Oct 31, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor substrate includes the steps of performing flame electrolysis on a galss source with an oxyhydrogen flame, spray-depositing the resultant glass particles on a joint surface of a semiconductor substrate, placing another semiconductor substrate on the deposited glass particles and performing heat-treatment, and joining the two substrates by sintering the glass particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.