Method of manufacturing semiconductor devices involving the detection of impurities
US4978915A · kind A · utility
18Cited by
8References
7Claims
0Family size
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Key dates
| Filing date | Nov 7, 1989 |
| Grant date | Dec 18, 1990 |
| Priority date | — |
| Expiry date | Nov 7, 2009 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2639
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The TVS method is a voltammetric method for detecting mobile ionic impurities in the dielectric layer of a MOS capacitor structure. Disclosed here is a method of semiconductor device fabrication involving a modified TVS method in which the voltage is changed in discrete steps rather than varied continuously, and charge, rather than induced current, is measured. The modified TVS method can be faster than conventional TVS, and calibration is unnecessary.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.